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Condensed Matter > Mesoscale and Nanoscale Physics

Title: Formation of quantum dots in GaN/AlGaN FETs

Abstract: GaN and the heterostructures are attractive in condensed matter science and applications for electronic devices. We measure the electron transport in GaN/AlGaN field-effect transistors (FETs) at cryogenic temperature. We observe formation of quantum dots in the conduction channel near the depletion of the 2-dimensional electron gas (2DEG). Multiple quantum dots are formed in the disordered potential induced by impurities in the FET conduction channel. We also measure the gate insulator dependence of the transport properties. These results can be utilized for the development of quantum dot devices utilizing GaN/AlGaN heterostructures and evaluation of the impurities in GaN/AlGaN FET channels.
Comments: 10 pages, 4 figures
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Journal reference: Scientific Reports 10, 15421 (2020)
DOI: 10.1038/s41598-020-72269-z
Cite as: arXiv:2002.03297 [cond-mat.mes-hall]
  (or arXiv:2002.03297v2 [cond-mat.mes-hall] for this version)

Submission history

From: Tomohiro Otsuka [view email]
[v1] Sun, 9 Feb 2020 06:28:30 GMT (1128kb)
[v2] Tue, 19 May 2020 02:45:16 GMT (591kb,D)

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