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Condensed Matter > Materials Science

Title: Heteroepitaxial integration of ZnGeN2 on GaN buffers using molecular beam epitaxy

Abstract: Recently theorized hybrid II-IV-N{_2} / III-N heterostructures, based on current commercialized (In,Ga)N devices, are predicted to significantly advance the design space of highly efficient optoelectronics in the visible spectrum, yet there are few epitaxial studies of II-IV-N{_2} materials. In this work, we present heteroepitaxial ZnGeN{_2} grown on GaN buffers and AlN templates. We demonstrate that a GaN nucleating surface is crucial for increasing the ZnGeN{_2} crystallization rate to combat Zn desorption, extending the stoichiometric growth window from 215 {\degree}C on AlN to 500 {\degree}C on GaN buffers. Structural characterization reveals well crystallized films with threading dislocations extending from the GaN buffer. These films have a critical thickness for relaxation of 20 nm - 25 nm as determined by reflection high energy electron diffraction (RHEED) and cross-sectional scanning electron microscopy (SEM). The films exhibit a cation-disordered wurtzite structure, with lattice constants a = 3.216 {\AA} {\pm} 0.004 {\AA} and c = 5.215 {\AA} {\pm} 0.005 {\AA} determined by RHEED and X-ray diffraction (XRD). This work demonstrates a significant step towards the development of hybrid ZnGeN{_2}-GaN integrated devices.
Comments: 20 pages, 7 figures
Subjects: Materials Science (cond-mat.mtrl-sci); Applied Physics (physics.app-ph)
Journal reference: Cryst. Growth Des. 2020,
DOI: 10.1021/acs.cgd.9b01578
Cite as: arXiv:2002.03980 [cond-mat.mtrl-sci]
  (or arXiv:2002.03980v1 [cond-mat.mtrl-sci] for this version)

Submission history

From: M. Brooks Tellekamp Jr. [view email]
[v1] Mon, 10 Feb 2020 17:48:13 GMT (637kb)

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