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Condensed Matter > Materials Science

Title: Decoration of growth sector boundaries with single nitrogen vacancy centres in as-grown single crystal HPHT synthetic diamond

Abstract: Large (> 100 mm$^3$), relatively pure (type II) and low birefringence single crystal diamond can be produced by high pressure high temperature (HPHT) synthesis. In this study we examine a HPHT sample of good crystalline perfection, containing less than 1 ppb (part per billion carbon atoms) of boron impurity atoms in the {001} growth sector and only tens of ppb of nitrogen impurity atoms. It is shown that the boundaries between {111} and {113} growth sectors are decorated by negatively charged nitrogen vacancy centres (NV$^-$): no decoration is observed at any other type of growth sector interface. This decoration can be used to calculated the relative {111} and {113} growth rates. The bulk (001) sector contains concentrations of luminescent point defects (excited with 488 and 532 nm wavelengths) below 10$^{11}$ cm$^{-3}$ (10$^{-3}$ ppb). We observe the negatively charged silicon-vacancy (SiV$^-$) defect in the bulk {111} sectors along with a zero phonon line emission associated with a nickel defect at 884 nm (1.40 eV). No preferential orientation is seen for either NV$^-$ or SiV$^-$ defects, but the nickel related defect is oriented with its trigonal axis along the <111> sector growth direction. Since the NV$^-$ defect is expected to readily re-orientate at HPHT diamond growth temperatures, no preferential orientation is expected for this defect but the lack of preferential orientation of SiV$^-$ in {111} sectors is not explained.
Subjects: Materials Science (cond-mat.mtrl-sci)
Journal reference: Phys. Rev. Materials 4, 093402 (2020)
DOI: 10.1103/PhysRevMaterials.4.093402
Cite as: arXiv:2002.07881 [cond-mat.mtrl-sci]
  (or arXiv:2002.07881v1 [cond-mat.mtrl-sci] for this version)

Submission history

From: Mark Newton Prof [view email]
[v1] Tue, 18 Feb 2020 21:10:56 GMT (1284kb)

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