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Physics > Applied Physics

Title: The Fourier signatures of memristive hysteresis

Abstract: While resistors with memory, sometimes called memristive elements (such as ReRAM cells), are often studied under conditions of periodic driving, little attention has been paid to the Fourier features of their memory response (hysteresis). Here we demonstrate experimentally that the hysteresis of memristive systems can be unambiguously distinguished from the linear or non-linear response of systems without hysteresis by the values of certain Fourier series coefficients. We also show that the Fourier series convergence depends on driving conditions, and introduce a measure of hysteresis. These results may be used to quantify the memory content of resistive memories, and tune their Fourier spectrum according to the excitation signal.
Subjects: Applied Physics (physics.app-ph); Emerging Technologies (cs.ET)
DOI: 10.1088/1361-6463/abedf1
Cite as: arXiv:2010.01313 [physics.app-ph]
  (or arXiv:2010.01313v3 [physics.app-ph] for this version)

Submission history

From: Yuriy Pershin [view email]
[v1] Sat, 3 Oct 2020 09:43:47 GMT (89kb,D)
[v2] Fri, 4 Dec 2020 22:26:59 GMT (111kb,D)
[v3] Fri, 26 Mar 2021 03:43:43 GMT (112kb,D)

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