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Condensed Matter > Mesoscale and Nanoscale Physics

Title: Roadmap for gallium arsenide spin qubits

Abstract: Gate-defined quantum dots in gallium arsenide (GaAs) have been used extensively for pioneering spin qubit devices due to the relative simplicity of fabrication and favourable electronic properties such as a single conduction band valley, a small effective mass, and stable dopants. GaAs spin qubits are readily produced in many labs and are currently studied for various applications, including entanglement, quantum non-demolition measurements, automatic tuning, multi-dot arrays, coherent exchange coupling, and teleportation. Even while much attention is shifting to other materials, GaAs devices will likely remain a workhorse for proof-of-concept quantum information processing and solid-state experiments.
Comments: This section is part of a roadmap on quantum technologies and comprises 4 pages with 2 figures
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall); Quantum Physics (quant-ph)
Report number: NBI QDEV 2020
Cite as: arXiv:2011.13907 [cond-mat.mes-hall]
  (or arXiv:2011.13907v1 [cond-mat.mes-hall] for this version)

Submission history

From: Ferdinand Kuemmeth [view email]
[v1] Fri, 27 Nov 2020 18:48:20 GMT (295kb)

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