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Condensed Matter > Materials Science

Title: Electronic and Structural Properties of Janus SMoSe/MoX$_2$ (X=S,Se) In-plane Heterojunctions: A DFT Study

Abstract: The electronic and structural properties of Janus MoSSe/MoX$_2$ (X=S,Se) in-plane heterojunctions, endowed with single-atom vacancies, were studied using density functional theory calculations. The stability of these structures was verified from cohesion energy calculations. Results showed that single-atom vacancies induce the appearance of flat midgap states, and a substantial amount of charge is localized in the vicinity of these defects. As a consequence, these heterojunctions presented an intrinsic dipole moment. No bond reconstructions were noted by removing an atom from the lattice, regardless of its chemical species. Our calculations predicted indirect electronic bandgap values between 1.6-1.7 eV.
Comments: 10 pages, 5 Figures
Subjects: Materials Science (cond-mat.mtrl-sci); Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
MSC classes: 00-XX
ACM classes: J.2.0; I.6.0
Journal reference: Chemical Physics Letters Volume 771, 2021, 138495
DOI: 10.1016/j.cplett.2021.138495
Cite as: arXiv:2012.05953 [cond-mat.mtrl-sci]
  (or arXiv:2012.05953v1 [cond-mat.mtrl-sci] for this version)

Submission history

From: Luiz Antonio Ribeiro Junior [view email]
[v1] Thu, 10 Dec 2020 20:14:38 GMT (11093kb,D)

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