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Physics > Atomic Physics

Title: TSV-integrated Surface Electrode Ion Trap for Scalable Quantum Information Processing

Abstract: In this study, we report the first Cu-filled through silicon via (TSV) integrated ion trap. TSVs are placed directly underneath electrodes as vertical interconnections between ion trap and a glass interposer, facilitating the arbitrary geometry design with increasing electrodes numbers and evolving complexity. The integration of TSVs reduces the form factor of ion trap by more than 80%, minimizing parasitic capacitance from 32 to 3 pF. A low RF dissipation is achieved in spite of the absence of ground screening layer. The entire fabrication process is on 12-inch wafer and compatible with established CMOS back end process. We demonstrate the basic functionality of the trap by loading and laser-cooling single 88Sr+ ions. It is found that both heating rate (17 quanta/ms for an axial frequency of 300 kHz) and lifetime (~30 minutes) are comparable with traps of similar dimensions. This work pioneers the development of TSV-integrated ion traps, enriching the toolbox for scalable quantum computing.
Subjects: Atomic Physics (physics.atom-ph); Quantum Physics (quant-ph)
DOI: 10.1063/5.0042531
Cite as: arXiv:2101.00869 [physics.atom-ph]
  (or arXiv:2101.00869v1 [physics.atom-ph] for this version)

Submission history

From: Luca Guidoni [view email]
[v1] Mon, 4 Jan 2021 10:28:59 GMT (3613kb)

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