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Condensed Matter > Materials Science

Title: First principles design of Ohmic spin diodes based on quaternary Heusler compounds

Abstract: The Ohmic spin diode (OSD) is a recent concept in spintronics, which is based on half-metallic magnets (HMMs) and spin-gapless semiconductors (SGSs). Quaternary Heusler compounds offer a unique platform to realize the OSD for room temperature applications as these materials possess very high Curie temperatures as well as half-metallic and spin-gapless semiconducting behavior within the same family. Using state-of-the-art first-principles calculations combined with the non-equilibrium Green's function method we design four different OSDs based on half-metallic and spin-gapless semiconducting quaternary Heusler compounds. All four OSDs exhibit linear current-voltage ($I-V$) characteristics with zero threshold voltage $V_T$. We show that these OSDs possess a small leakage current, which stems from the overlap of the conduction and valence band edges of opposite spin channels around the Fermi level in the SGS electrodes. The obtained on/off current ratios vary between $30$ and $10^5$. Our results can pave the way for the experimental fabrication of the OSDs within the family of ordered quaternary Heusler compounds.
Comments: 7 pages, 5 figures
Subjects: Materials Science (cond-mat.mtrl-sci); Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Journal reference: Appl. Phys. Lett. 118, 052405 (2021)
DOI: 10.1063/5.0037085
Cite as: arXiv:2102.01919 [cond-mat.mtrl-sci]
  (or arXiv:2102.01919v1 [cond-mat.mtrl-sci] for this version)

Submission history

From: Thorsten Aull [view email]
[v1] Wed, 3 Feb 2021 07:38:39 GMT (1926kb,D)

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