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Condensed Matter > Mesoscale and Nanoscale Physics

Title: Semiconductor materials stacks for quantum dot spin qubits

Abstract: In this perspective piece, I benchmark gallium arsenide, silicon, and germanium as material platforms for gate-defined quantum dot spin qubits. I focus on materials stacks, quantum dot architectures, bandstructure properties and qualifiers for disorder from electrical transport. This brief note is far from being exhaustive and should be considered a first introduction to the materials challenges and opportunities towards a larger spin qubit quantum processor.
Comments: An edited version of this manuscript will appear as an article section in MRS Bulletin
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall); Materials Science (cond-mat.mtrl-sci)
DOI: 10.1557/s43577-021-00147-8
Cite as: arXiv:2102.10897 [cond-mat.mes-hall]
  (or arXiv:2102.10897v2 [cond-mat.mes-hall] for this version)

Submission history

From: Giordano Scappucci [view email]
[v1] Mon, 22 Feb 2021 11:00:17 GMT (1540kb,D)
[v2] Tue, 23 Feb 2021 14:33:12 GMT (2445kb,D)

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