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Physics > Applied Physics

Title: On the Performance of Dual-Gate Reconfigurable Nanowire Transistors

Abstract: We investigate the operation of dual-gate reconfigurable field-effect transistor (RFET) in the programgate at drain (PGAD) and program-gate at source (PGAS) configurations. To this end, dual-gate silicon nanowire (SiNW) FETs are fabricated based on anisotropic wet chemical silicon etching and nickel silicidation yielding silicide-SiNW Schottky junctions at source and drain. Whereas in PGAD-configuration ambipolar operation is suppressed, switching is deteriorated due to the injection through a Schottky-barrier. Operating the RFET in PGAS configuration yields a switching behavior close to a conventional MOSFET. This, howewer, needs to be traded off against strongly non-linear output characteristics for small bias.
Comments: 5 pages
Subjects: Applied Physics (physics.app-ph)
Journal reference: IEEE Transactions on Electron Devices, vol. 68, no. 7, pp. 3684-3689, 2021
DOI: 10.1109/TED.2021.3081527
Report number: RWTH-2021-06848
Cite as: arXiv:2103.00096 [physics.app-ph]
  (or arXiv:2103.00096v1 [physics.app-ph] for this version)

Submission history

From: Bin Sun [view email]
[v1] Sat, 27 Feb 2021 01:10:06 GMT (2075kb,D)

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