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Condensed Matter > Materials Science

Title: Strong bulk-surface interaction dominated in-plane anisotropy of electronic structure in GaTe

Abstract: Recently, intriguing physical properties have been unraveled in anisotropic layered semiconductors, in which the in-plane electronic band structure anisotropy often originates from the low crystallographic symmetry and thus a thickness-independent character emerges. Here, we apply high-resolution angle-resolved photoemission spectroscopy to directly image the in-plane anisotropic energy bands in monoclinic gallium telluride (GaTe). Our first-principles calculations reveal the in-plane anisotropic energy band structure of GaTe measured experimentally is dominated by a strong bulk-surface interaction rather than geometric factors, surface effect and quantum confinement effect. Furthermore, accompanied by the thickness of GaTe increasing from mono- to few-layers, the strong interlayer coupling of GaTe induces direct-indirect-direct band gap transitions and the in-plane anisotropy of hole effective mass is reversed. Our results shed light on the physical origins of in-plane anisotropy of electronic structure in GaTe, paving the way for the design and device applications of nanoelectronics and optoelectronics based on anisotropic layered semiconductors.
Comments: To be published in Communications Physics
Subjects: Materials Science (cond-mat.mtrl-sci); Mesoscale and Nanoscale Physics (cond-mat.mes-hall); Computational Physics (physics.comp-ph)
Journal reference: Communications Physics (2022) 5:143
DOI: 10.1038/s42005-022-00923-1
Cite as: arXiv:2103.00272 [cond-mat.mtrl-sci]
  (or arXiv:2103.00272v4 [cond-mat.mtrl-sci] for this version)

Submission history

From: Jiayu Dai [view email]
[v1] Sat, 27 Feb 2021 17:26:00 GMT (1092kb)
[v2] Thu, 13 May 2021 08:25:52 GMT (2882kb)
[v3] Wed, 2 Mar 2022 07:08:04 GMT (3323kb)
[v4] Sat, 23 Apr 2022 00:14:46 GMT (3323kb)

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