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Condensed Matter > Materials Science

Title: Imaging non-radiative point defects buried in quantum wells using cathodoluminescence

Abstract: Crystallographic point defects (PDs) can dramatically decrease the efficiency of optoelectronic semiconductor devices, many of which are based on quantum well (QW) heterostructures. However, spatially resolving individual non-radiative PDs buried in such QWs has so far not been demonstrated. Here, using high-resolution cathodoluminescence (CL) and a specific sample design, we spatially resolve, image, and analyse non-radiative PDs in InGaN/GaN QWs. We identify two different types of PD by their contrasting behaviour with temperature, and measure their densities from $10^{14}$ cm$^{-3}$ to as high as $10^{16}$ cm$^{-3}$. Our CL images clearly illustrate the interplay between PDs and carrier dynamics in the well: increasing PD concentration severely limits carrier diffusion lengths, while a higher carrier density suppresses the non-radiative behaviour of PDs. The results in this study are readily interpreted directly from CL images, and represent a significant advancement in nanoscale PD analysis.
Comments: Main text: 8 pages, 6 figures. Supplementary: 11 pages, 8 figures
Subjects: Materials Science (cond-mat.mtrl-sci); Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Journal reference: Nano Lett. 21 (2021) 5217-5224
DOI: 10.1021/acs.nanolett.1c01295
Cite as: arXiv:2103.09702 [cond-mat.mtrl-sci]
  (or arXiv:2103.09702v1 [cond-mat.mtrl-sci] for this version)

Submission history

From: Thomas Weatherley [view email]
[v1] Wed, 17 Mar 2021 14:59:00 GMT (25141kb,D)

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