We gratefully acknowledge support from
the Simons Foundation and member institutions.
Full-text links:

Download:

Current browse context:

cond-mat.mtrl-sci

Change to browse by:

References & Citations

Bookmark

(what is this?)
CiteULike logo BibSonomy logo Mendeley logo del.icio.us logo Digg logo Reddit logo ScienceWISE logo

Condensed Matter > Materials Science

Title: Degradiation of $β$-Ga$_2$O$_3$ Schottky barrier diode under swift heavy ion irradiation

Abstract: The electrical characteristics and microstructures of $\beta$-Ga$_2$O$_3$ Schottky barrier diode (SBD) devices irradiated with swift heavy ions (2096 MeV Ta ions) have been studied. It was found that $\beta$-Ga$_2$O$_3$ SBD devices showed the reliability degradation after irradiation, including turn-on voltage Von, on-resistance Ron, ideality factor n and the reverse leakage current density Jr. In addition, the carrier concentration of the drift layer was decreased significantly and the calculated carrier removal rates were 5*106 - 1.3*107 cm-1. Latent tracks induced by swift heavy ions were observed visually in the whole $\beta$-Ga$_2$O$_3$ matrix. Furthermore, crystal structure of tracks was amorphized completely. The latent tracks induced by Ta ions bombardments were found to be the reason for the decrease in carrier mobility and carrier concentration. Eventually, these defects caused the degradation of electrical characteristics of the devices. By comparing the carrier removal rates, the $\beta$-Ga$_2$O$_3$ SBD devices were more sensitive to swift heavy ions irradiation than SiC and GaN devices.
Subjects: Materials Science (cond-mat.mtrl-sci); Applied Physics (physics.app-ph)
DOI: 10.1088/1674-1056/abf107
Cite as: arXiv:2103.13562 [cond-mat.mtrl-sci]
  (or arXiv:2103.13562v1 [cond-mat.mtrl-sci] for this version)

Submission history

From: Wensi Ai [view email]
[v1] Thu, 25 Mar 2021 01:53:19 GMT (1201kb)

Link back to: arXiv, form interface, contact.