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Computer Science > Emerging Technologies

Title: Modelling and design of FTJs as high reading-impedance synaptic devices

Abstract: We present an in-house modelling framework for Ferroelectric Tunnelling Junctions (FTJ), and an insightful study of the design of FTJs as synaptic devices. Results show that a moderately low-k tunnelling dielectric (e.g. SiO2) can increase the read current and the current dynamic range.
Comments: 2021 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copy-righted component of this work in other works
Subjects: Emerging Technologies (cs.ET)
Cite as: arXiv:2105.00752 [cs.ET]
  (or arXiv:2105.00752v1 [cs.ET] for this version)

Submission history

From: Riccardo Fontanini [view email]
[v1] Mon, 3 May 2021 11:03:02 GMT (2148kb,D)

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