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Condensed Matter > Mesoscale and Nanoscale Physics

Title: Observation of current-induced switching in non-collinear antiferromagnetic IrMn$_3$ by differential voltage measurements

Abstract: There is accelerating interest in developing memory devices using antiferromagnetic (AFM) materials, motivated by the possibility for electrically controlling AFM order via spin-orbit torques, and its read-out via magnetoresistive effects. Recent studies have shown, however, that high current densities create non-magnetic contributions to resistive switching signals in AFM/heavy metal (AFM/HM) bilayers, complicating their interpretation. Here we introduce an experimental protocol to unambiguously distinguish current-induced magnetic and nonmagnetic switching signals in AFM/HM structures, and demonstrate it in IrMn$_3$/Pt devices. A six-terminal double-cross device is constructed, with an IrMn$_3$ pillar placed on one cross. The differential voltage is measured between the two crosses with and without IrMn$_3$ after each switching attempt. For a wide range of current densities, reversible switching is observed only when write currents pass through the cross with the IrMn$_3$ pillar, eliminating any possibility of non-magnetic switching artifacts. Micromagnetic simulations support our findings, indicating a complex domain-mediated switching process.
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall); Applied Physics (physics.app-ph)
DOI: 10.1038/s41467-021-24237-y
Cite as: arXiv:2105.02277 [cond-mat.mes-hall]
  (or arXiv:2105.02277v1 [cond-mat.mes-hall] for this version)

Submission history

From: Victor Lopez Dominguez [view email]
[v1] Wed, 5 May 2021 18:43:34 GMT (1735kb)

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