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Physics > Applied Physics

Title: A small-signal description of black phosphorus transistor technologies for high-frequency applications

Abstract: This work presents a small-signal high-frequency (HF) equivalent circuit (EC) to model AC performances of black-phosphorous field-effect transistors (BPFETs). The proposed EC is able to describe correctly both the experimental HF intrinsic and extrinsic figures of merit, as well as S-parameters, from different BPFET technologies. Single- and double-stage radio frequency gain amplifiers, are designed at 2.4 GHz using the experimentally-calibrated small-signal BPFET EC. Results show high-gain high-selective BPFET-based amplifiers.
Subjects: Applied Physics (physics.app-ph)
Journal reference: IEEE Microwave and Wireless Components Letters, Jun. 2021
DOI: 10.1109/LMWC.2021.3086047
Cite as: arXiv:2106.04246 [physics.app-ph]
  (or arXiv:2106.04246v1 [physics.app-ph] for this version)

Submission history

From: Anibal Pacheco-Sanchez [view email]
[v1] Tue, 8 Jun 2021 10:48:40 GMT (415kb,D)

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