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Computer Science > Emerging Technologies

Title: Fully CMOS-compatible passive TiO2-based memristor crossbars for in-memory computing

Abstract: Brain-inspired computing and neuromorphic hardware are promising approaches that offer great potential to overcome limitations faced by current computing paradigms based on traditional von-Neumann architecture. In this regard, interest in developing memristor crossbar arrays has increased due to their ability to natively perform in-memory computing and fundamental synaptic operations required for neural network implementation. For optimal efficiency, crossbar-based circuits need to be compatible with fabrication processes and materials of industrial CMOS technologies. Herein, we report a complete CMOS-compatible fabrication process of TiO2-based passive memristor crossbars with 700 nm wide electrodes. We show successful bottom electrode fabrication by a damascene process, resulting in an optimised topography and a surface roughness as low as 1.1 nm. DC sweeps and voltage pulse programming yield statistical results related to synaptic-like multilevel switching. Both cycle-to-cycle and device-to-device variability are investigated. Analogue programming of the conductance using sequences of 200 ns voltage pulses suggest that the fabricated memories have a multilevel capacity of at least 3 bits due to the cycle-to-cycle reproducibility.
Comments: 18 pages, 4 figures in main text, 5 figures in SI
Subjects: Emerging Technologies (cs.ET); Applied Physics (physics.app-ph)
Cite as: arXiv:2106.11808 [cs.ET]
  (or arXiv:2106.11808v3 [cs.ET] for this version)

Submission history

From: Abdelouadoud El Mesoudy [view email]
[v1] Tue, 22 Jun 2021 14:24:30 GMT (3193kb)
[v2] Fri, 25 Jun 2021 17:30:13 GMT (3193kb)
[v3] Wed, 8 Dec 2021 19:29:54 GMT (1302kb)

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