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Physics > Applied Physics

Title: Vertical GaN Devices: Process and Reliability

Abstract: This paper reviews recent progress and key challenges in process and reliability for high-performance vertical GaN transistors and diodes, focusing on the 200 mm CMOS-compatible technology. We particularly demonstrated the potential of using 200 mm diameter CTE matched substrates for vertical power transistors, and gate module optimizations for device robustness. An alternative technology path based on coalescence epitaxy of GaN-on-Silicon is also introduced, which could enable thick drift layers of very low dislocation density.
Comments: ["European Union (EU)" & "Horizon 2020"]["Euratom" & Euratom research & training programme 2014-2018"][ECSEL Joint Undertaking (JU)][UltimateGaN][grant agreement No 826392]
Subjects: Applied Physics (physics.app-ph)
DOI: 10.1016/j.microrel.2021.114218
Cite as: arXiv:2107.02469 [physics.app-ph]
  (or arXiv:2107.02469v2 [physics.app-ph] for this version)

Submission history

From: Carlo De Santi [view email]
[v1] Tue, 6 Jul 2021 08:30:11 GMT (691kb)
[v2] Wed, 7 Jul 2021 06:46:14 GMT (744kb)

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