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Physics > Applied Physics

Title: OFF-state trapping phenomena in GaN HEMTs: interplay between gate trapping, acceptor ionization and positive charge redistribution

Abstract: We present an extensive analysis of the trapping processes induced by drain bias stress in AlGaN/GaN high-electron-mobility transistors (HEMTs) with p-GaN gate. We demonstrate that: (i) with increasing drain stress, pulsed I-V and VTH measurements shown an initial positive VTH variation and an increase in RON then, for drain voltages >100 V, VTH is stable and the RON shows a partial recovery. (ii) At moderate voltages, VTH instability is related to trapping at the gate stack, due to residual negative charge left behind by the holes that leave the p-GaN layer through the Schottky gate contact and/or to trapping at the barrier. At higher voltages, we demonstrate the interplay of two trapping processes by C-V and pulsed drain current analysis: (iii) a fast storage of positive charge, accumulated near the buffer/SRL interface, not strongly thermally activated, dominating at higher voltages; (iv) a slower negative charge storage, thermally activated with activation energies for trapping and de-trapping equal to ~0.6 eV and ~0.4-0.8 eV, respectively.
Comments: ["European Union (EU)" & "Horizon 2020"]["Euratom" & Euratom research & training programme 2014-2018"][European Union's Horizon 2020 research and innovation program][InRel-NPower][grant agreement No. 720527]
Subjects: Applied Physics (physics.app-ph)
Journal reference: Microelectronics Reliability, Volume 114, 2020, 113841
DOI: 10.1016/j.microrel.2020.113841
Cite as: arXiv:2107.05934 [physics.app-ph]
  (or arXiv:2107.05934v2 [physics.app-ph] for this version)

Submission history

From: Carlo De Santi [view email]
[v1] Tue, 13 Jul 2021 09:16:12 GMT (611kb)
[v2] Wed, 14 Jul 2021 07:45:31 GMT (611kb)

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