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Condensed Matter > Materials Science

Title: Step-edge epitaxy for borophene growth on insulators

Abstract: Borophene, a monoatomic layer of boron atoms, stands out among two-dimensional (2D) materials, with its versatile properties of polymorphism, metallicity, plasmonics, superconductivity, tantalizing for physics exploration and next-generation devices. Yet its phases are all synthesized on and stay bound to metal substrates, hampering both characterization and use. The growth on the inert insulator would allow post-synthesis exfoliation of borophene, but its weak adhesion to such substrate results in a very high 2D-nucleation barrier preventing clean borophene growth. This challenge can be circumvented in a devised and demonstrated here, with ab initio calculations, strategy. Naturally present 1D-defects, the step-edges on h-BN substrate surface, enable boron epitaxial assembly, reduce the nucleation dimensionality and lower the barrier by an order of magnitude (to 1.1 eV or less), yielding v1/9 phase. Weak borophene adhesion to the insulator makes it readily accessible for comprehensive property tests or transfer into the device setting.
Subjects: Materials Science (cond-mat.mtrl-sci)
Journal reference: ACS Nano 2021 15 (11), 18347-18353
DOI: 10.1021/acsnano.1c07589
Cite as: arXiv:2108.09572 [cond-mat.mtrl-sci]
  (or arXiv:2108.09572v1 [cond-mat.mtrl-sci] for this version)

Submission history

From: Qiyuan Ruan [view email]
[v1] Sat, 21 Aug 2021 19:43:50 GMT (844kb)

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