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Condensed Matter > Mesoscale and Nanoscale Physics
Title: Hopping conduction in strongly insulating states of a diffusive bent quantum Hall junction
(Submitted on 29 Feb 2008 (v1), last revised 15 Jul 2008 (this version, v2))
Abstract: Transport studies of a bent quantum Hall junction at integer filling factors show strongly insulating states at higher fields. In this paper we analyze the strongly insulating behavior as a function of temperature T and dc bias V, in order to classify the localization mechanisms responsible for the insulating state. The temperature dependence suggests a crossover from activated nearest-neighbor hopping at higher T to variable-range hopping conduction at lower T. The base temperature electric field dependence is consistent with 1D variable-range hopping conduction. We observe almost identical behavior at filling factors 1 and 2, and discuss how the bent quantum Hall junction conductance appears to be independent of the bulk spin state. Various models of 1D variable-range hopping which either include or ignore interactions are compared, all of which are consistent with the basic model of disorder coupled counter-propagating quantum Hall edges.
Submission history
From: Lucia Steinke [view email][v1] Fri, 29 Feb 2008 16:49:12 GMT (386kb,D)
[v2] Tue, 15 Jul 2008 01:54:36 GMT (398kb,D)
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