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Condensed Matter > Mesoscale and Nanoscale Physics
Title: Cryogenic Microwave Imaging of Metal-Insulator Transition in Doped Silicon
(Submitted on 7 Oct 2010 (v1), last revised 20 May 2011 (this version, v2))
Abstract: We report the instrumentation and experimental results of a cryogenic scanning microwave impedance microscope. The microwave probe and the scanning stage are located inside the variable temperature insert of a helium cryostat. Microwave signals in the distance modulation mode are used for monitoring the tip-sample distance and adjusting the phase of the two output channels. The ability to spatially resolve the metal-insulator transition in a doped silicon sample is demonstrated. The data agree with a semi-quantitative finite-element simulation. Effects of the thermal energy and electric fields on local charge carriers can be seen in the images taken at different temperatures and DC biases.
Submission history
From: Worasom Kundhikanjana [view email][v1] Thu, 7 Oct 2010 18:46:34 GMT (1562kb,D)
[v2] Fri, 20 May 2011 22:46:28 GMT (2749kb,D)
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