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Condensed Matter > Mesoscale and Nanoscale Physics
Title: Magnetoresistance and negative differential resistance in Ni/Graphene/Ni vertical heterostructures driven by finite bias voltage: A first-principles study
(Submitted on 30 Jan 2012 (v1), last revised 29 Mar 2012 (this version, v2))
Abstract: Using the nonequilibrium Green function formalism combined with density functional theory, we study finite-bias quantum transport in Ni/Gr_n/Ni vertical heterostructures where $n$ graphene layers are sandwiched between two semi-infinite Ni(111) electrodes. We find that recently predicted "pessimistic" magnetoresistance of 100% for $n \ge 5$ junctions at zero bias voltage $V_b \rightarrow 0$, persists up to $V_b \simeq 0.4$ V, which makes such devices promising for spin-torque-based device applications. In addition, for parallel orientations of the Ni magnetizations, the $n=5$ junction exhibits a pronounced negative differential resistance as the bias voltage is increased from $V_b=0$ V to $V_b \simeq 0.5$ V. We confirm that both of these nonequilibrium effects hold for different types of bonding of Gr on the Ni(111) surface while maintaining Bernal stacking between individual Gr layers.
Submission history
From: Branislav Nikolic [view email][v1] Mon, 30 Jan 2012 16:54:51 GMT (984kb,D)
[v2] Thu, 29 Mar 2012 14:31:09 GMT (985kb,D)
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