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Condensed Matter > Materials Science
Title: Anomalous Fermi level behavior in GaMnAs at the onset of ferromagnetism
(Submitted on 2 Aug 2012 (v1), last revised 24 Apr 2013 (this version, v2))
Abstract: We present the systematic study of the resonant tunneling spectroscopy on a series of ferromagnetic-semiconductor Ga1-xMnxAs with the Mn content x from ~0.01 to 3.2%. The Fermi level of Ga1-xMnxAs exists in the band gap in the whole x region. The Fermi level is closest to the valence band (VB) at x=1.0% corresponding to the onset of ferromagnetism near the metal-insulator transition (MIT), but it moves away from the VB as x increasing or decreasing from 1.0%. This anomalous behavior of the Fermi level indicates that the ferromagnetism and MIT emerge in the Mn-derived impurity band.
Submission history
From: Iriya Muneta [view email][v1] Thu, 2 Aug 2012 18:55:38 GMT (1091kb)
[v2] Wed, 24 Apr 2013 07:03:49 GMT (248kb,D)
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