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Condensed Matter > Mesoscale and Nanoscale Physics
Title: Contact-induced negative differential resistance in short-channel graphene FETs
(Submitted on 10 Aug 2012 (v1), last revised 22 Dec 2012 (this version, v2))
Abstract: In this work, we clarify the physical mechanism for the phenomenon of negative output differential resistance (NDR) in short-channel graphene FETs (GFETs) through non-equilibrium Green's function (NEGF) simulations and a simpler semianalytical ballistic model that captures the essential physics. This NDR phenomenon is due to a transport mode bottleneck effect induced by the graphene Dirac point in the different device regions, including the contacts. NDR is found to occur only when the gate biasing produces an n-p-n or p-n-p polarity configuration along the channel, for both positive and negative drain-source voltage sweep. In addition, we also explore the impact on the NDR effect of contact-induced energy broadening in the source and drain regions and a finite contact resistance.
Submission history
From: Roberto Grassi [view email][v1] Fri, 10 Aug 2012 12:38:23 GMT (123kb)
[v2] Sat, 22 Dec 2012 11:33:24 GMT (126kb)
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