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Condensed Matter > Materials Science
Title: Half-Semiconductor antiferromagnets and Spin-Gapless-Semiconductor antiferromagnets
(Submitted on 1 Aug 2013 (v1), last revised 23 Aug 2013 (this version, v3))
Abstract: We propose a concept of half-semiconductor antiferromagnets in which both spin-polarized valence and conduction bands belong to the same spin channel with completely compensated spontaneous magnetization. Using density functional theory plus Hubbard U (DFT+U) methods, we find a viable approach to achieve the half-semiconductor antiferromagnets through the transition metal (TM) Fe and Cr codoped boron nitride(BN) sheet. Moreover, spin gapless semiconductor antiferromagnets with zero magnetic moment are also achieved in such systems.
Submission history
From: Lizhong Sun [view email][v1] Thu, 1 Aug 2013 15:55:19 GMT (1006kb)
[v2] Fri, 2 Aug 2013 12:02:58 GMT (1006kb)
[v3] Fri, 23 Aug 2013 08:36:03 GMT (1006kb)
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