Title: Great suppression of bulk conductance and two-dimensional weak antilocalization of the topological surface state in Cu-doped Bi2Te3 crystal

Abstract: Here we report the observation of the two-dimensional weak antilocalization in the (Cu0.1Bi0.9)2Te3.06 topological insulators as demonstrated by the magnetic field-tilting resistance. It is the quantum correction from the surface states, which contribute the total conductance of 3.3% in the 30um-thick material. Such optimized topological insulators are achieved by intense aging, during which the bulk mobility is suppressed by 4 orders. Scanning tunneling microscopic measurement reveals that Cu atoms are initially inside the quintuple layers and later immigrate to the layer gaps with the formation of Cu clusters. Defects are formed with the result of low mobility during the immigration. The density functional theory calculation constructs an atomic-tunneling picture across a diffusion barrier of 0.57eV.