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Condensed Matter > Mesoscale and Nanoscale Physics
Title: Universality of transport through graphene-on-substrate
(Submitted on 21 Jan 2014 (this version), latest version 14 Sep 2014 (v2))
Abstract: By investigating low-temperature transport through many graphene devices on hBN substrates, we reveal a clear correlation between the carrier mobility $\mu$ and the width of the resistance peak around charge neutrality. The correlation -satisfied quantitatively also by devices realized in other laboratories and on other substrates- indicates that a same, universal microscopic mechanism limits the carrier mobility and generates charge fluctuations for graphene-on-substrate. Weak-localization measurements show that the underlying random disorder potential is long-ranged, at least for devices whose mobility is between 1.000 and 80.000 cm$^2$/Vs. We propose a theoretical interpretation based on the effects of strain in graphene, which reproduces all key aspects of our observations.
Submission history
From: DongKeun Ki [view email][v1] Tue, 21 Jan 2014 15:55:23 GMT (1041kb)
[v2] Sun, 14 Sep 2014 11:54:44 GMT (2870kb)
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