Title: Isovalent doping of bismuth with indium: a novel doping mechanism in solids

Abstract: A new doping mechanism is observed, whereby In dopes elemental Bi p-type in spite of the fact that both atoms are trivalent in the solid. Both Shubnikov - de Haas and Hall measurements show that adding In to Bi results in an increase of the density of holes in that semimetal. The effect is explained by band structure calculations, which identify that In forms a hyperdeep level about 5 eV below the Fermi energy of elemental Bi, which extracts two electrons from the main Bi valence band block, thus doping the system p-type. This doping mechanism has as main advantage over conventional charge-transfer doping of semiconductors the fact that the In atoms remain electrically neutral, which decreases the electron mobility less than ionized impurity scattering would.