Title: Magnetic field-enhanced spin filtering in NbN-DyN-NbN spin-filter tunnel junctions

Abstract: Spin filter tunnel junctions are based on selective tunneling of up and down spin electrons controlled through exchange splitting of the band structure of a ferromagnetic insulator. Therefore, spin filter efficiency can be tuned by adjusting exchange strength of the tunnel barrier. We have observed that magnetic field and bias voltage (current) can be used to regulate exchange strength and consequently spin-filter efficiency in tunnel junctions with ferromagnetic DyN tunnel barrier. We have found that DyN forms high quality tunnel barrier of height $\Phi_0$ = 60 meV with NbN electrodes. We obtained $\sim$37$\%$ spin polarization of tunneling electrons at 11 K due to a small exchange splitting $ E_{ex}$ = 5.6 meV of the barrier height $\Phi_0$. We observed enhancement in Curie temperature $T_{Curie}$ of DyN with magnetic field which hint field-induced enhanced magnetism in DyN. In presence of an applied magnetic field barrier height can further split due to magnetic field dependent exchange energy $ E_{ex}(H)$. The spin filter efficiency in these tunnel junctions can be increased up to $\sim$87$\%$ with magnetic field. Electric and magnetic field tuned spin-filter efficiency of DyN tunnel barrier gives opportunity for practical application of these devices with additional functionality.