Title: A New Compact Model For High-Performance Tunneling-Field Effect Transistors

Abstract: A new analytic compact model is presented which describes the full current-voltage (I-V) characteristic of ballistic high-performance (aggressively scaled-down) tunneling field-effect-transistors (TFETs) based on direct-bandgap semiconductors. The model is based on an analytic description of two key features, which capture the main physical phenomena related to TFETs: 1) the potential profile along the channel including the impact of doping concentration in the source, and 2) the evanescent states in the bandgap region of the semiconductor including the ellipticity of the imaginary branch. The analytic description of the potential profile is made using two different approaches. One of them is based on a piecewise function derived from the Poisson's equation in the source and channel, and the other is an ad-hoc potential that describes accurately the tunneling distance. The compact model is validated by comparison with state-of-the-art quantum transport simulations using a full band atomistic approach. Both approaches proposed to describe the potential profile are found in good agreement with the data from the simulations in all regions of operation: the on/off states and both n/p branches of conduction. It is shown that as TFETs are scaled-down the impact of source/drain doping on device performance becomes crucially relevant. In addition, it is shown how this model can be used to calculate the energy-dependent band-to-band tunneling (BTBT) currents in TFETs, a feature that allows gaining deep insights into the underlying device physics. The simplicity and accuracy of the model provides a powerful tool to explore in a quantitatively manner how a wide variety of parameters (material-, size- and/or geometry-dependent) impact the TFET performance under any bias conditions.