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Condensed Matter > Mesoscale and Nanoscale Physics
Title: Graphene field effect transistors with Niobium contacts and asymmetric transfer characteristics
(Submitted on 4 Aug 2015)
Abstract: We fabricate back-gated field effect transistors using Niobium electrodes on mechanically exfoliated monolayer graphene and perform electrical characterization in the pressure range from atmospheric down to 10-4 mbar. We study the effect of room temperature vacuum degassing and report asymmetric transfer characteristics with a resistance plateau in the n-branch. We show that weakly chemisorbed Nb acts as p-dopant on graphene and explain the transistor characteristics by Nb/graphene interaction with unpinned Fermi level at the interface.
Submission history
From: Antonio Di Bartolomeo [view email][v1] Tue, 4 Aug 2015 15:54:03 GMT (1014kb)
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