Title: Single-Electron Transport in Nanostructured Dirac Materials

Abstract: The relativistic dynamics of electronic excitations in two-dimensional Dirac materials such as graphene and the surface states of topological insulators gives rise to superb electronic properties relevant to a wide range of applications and fundamental questions in condensed matter physics. Graphene is a robust material for spintronics owing to its weak spin-orbit and hyperfine interaction, while the surface states of topological insulators exhibit a spin-momentum locking that opens up the possibility for controlling the spin degree of freedom in the absence of external magnetic fields. Nanostructures made of these materials are also viable in quantum computing applications involving the superposition and entanglement of individual charge and spin quanta. In this article, we review recent developments towards confining and manipulating charges in nanostructures fabricated from both graphene and topological insulators. We first focus on transport in graphene nanoribbons and quantum dots fabricated on SiO2 substrates and more recently on hexagonal boron nitride substrates in order to reduce the bulk disorder. In the second part of this article, we extend our discussion to topological insulators (TIs). After a brief review of bulk TI properties, we review recent developments in the fabrication and understanding of electronic properties of TI nanostructures. Finally, we outline how future work geared towards developing qubits in Dirac materials.