Title: Trapped-ion quantum logic with global radiation fields

Abstract: Trapped ions are a promising tool for building a large-scale quantum computer. The number of required radiation fields for the realisation of quantum gates in any proposed ion-based architecture scales with the number of ions inside the quantum computer, posing a major challenge when imagining a device with millions of qubits. Here we present a fundamentally different approach, where this scaling entirely vanishes. The method is based on individually controlled voltages applied to each logic gate location to facilitate the actual gate operation analogous to a traditional transistor architecture within a classical computer processor. We demonstrate the key principle of this approach by implementing a versatile quantum gate method based on long-wavelength radiation where we generate a maximally entangled two-qubit state with fidelity 0.985(12). This quantum gate also constitutes a simple-to-implement tool for quantum metrology, sensing and simulation.