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Condensed Matter > Materials Science
Title: Possible spin gapless semiconductor type behaviour in CoFeMnSi epitaxial thin films
(Submitted on 17 Jul 2017 (v1), last revised 14 Oct 2017 (this version, v2))
Abstract: Spin-gapless semiconductors with their unique band structures have recently attracted much attention due to their interesting transport properties that can be utilized in spintronics applications. We have successfully deposited the thin films of quaternary spin-gapless semiconductor CoFeMnSi Heusler alloy on MgO (001) substrates using a pulsed laser deposition system. These films show epitaxial growth along (001) direction and display uniform and smooth crystalline surface. The magnetic properties reveal that the film is ferromagnetically soft along the in-plane direction and its Curie temperature is well above 400 K. The electrical conductivity of the film is low and exhibits a nearly temperature independent semiconducting behaviour. The estimated temperature coefficient of resistivity for the film is -7x10^-10 Ohm.m/K, which is comparable to the values reported for spin-gapless semiconductors.
Submission history
From: Varun Kumar Kushwaha [view email][v1] Mon, 17 Jul 2017 10:28:30 GMT (727kb)
[v2] Sat, 14 Oct 2017 14:04:28 GMT (957kb)
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