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Physics > Computational Physics

Title: Inducing and Manipulating Magnetization in Two-Dimensional ZnO by Strain and External Gating

Abstract: Two-dimensional structures that exhibit intriguing magnetic phenomena such as perpendicular magnetic anisotropy and switchable magnetization are of great interests in spintronics research. Herein, the density-functional theory studies reveal the critical impacts of strain and external gating on vacancy-induced magnetism and its spin direction in a graphene-like single layer of zinc oxide (ZnO). In contrast to the pristine and defective ZnO with an O-vacancy, the presence of a Zn-vacancy induces significant magnetic moments to its first neighboring O and Zn atoms due to the charge deficit. We further predict that the direction of magnetization easy axis reverses from an in-plane to perpendicular orientation under a practically achieved biaxial compressive strain of $\sim$1--2\% or applying an electric-field by means of the charge density modulation. This magnetization reversal is driven by the strain- and electric-field-induced changes in the spin-orbit coupled \emph{d} states of the first-neighbor Zn atom to the Zn-vacancy. These findings open interesting prospects for exploiting strain and electric-field engineering to manipulate magnetism and magnetization orientation of two-dimensional materials.
Comments: 7 pages, 8 figures
Subjects: Computational Physics (physics.comp-ph); Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
DOI: 10.1088/1361-648X/aab283
Cite as: arXiv:1712.01578 [physics.comp-ph]
  (or arXiv:1712.01578v1 [physics.comp-ph] for this version)

Submission history

From: Dorj Odkhuu Prof. [view email]
[v1] Tue, 5 Dec 2017 11:28:22 GMT (2053kb,D)

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