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Condensed Matter > Mesoscale and Nanoscale Physics
Title: Valley-Dependent Magnetoresistance in Two-Dimensional Semiconductors
(Submitted on 14 Mar 2018 (v1), last revised 31 May 2018 (this version, v2))
Abstract: We show theoretically that two-dimensional direct-gap semiconductors with a valley degree of freedom, including monolayer transition-metal dichalcogenides and gapped bilayer graphene, have a longitudinal magnetoconductivity contribution that is odd in valley and odd in the magnetic field applied perpendicular to the system. Using a quantum kinetic theory we show how this valley-dependent magnetoconductivity arises from the interplay between the momentum-space Berry curvature of Bloch electrons, the presence of a magnetic field, and disorder scattering. We discuss how the effect can be measured experimentally and used as a detector of valley polarization.
Submission history
From: Akihiko Sekine [view email][v1] Wed, 14 Mar 2018 06:13:23 GMT (1157kb,D)
[v2] Thu, 31 May 2018 09:35:05 GMT (1158kb,D)
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