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Condensed Matter > Materials Science
Title: The formation of intermediate layers in covered Ge/Si heterostructures with low-temperature quantum dots: a study using high-resolution transmission electron microscopy and Raman spectroscopy
(Submitted on 16 Jul 2019 (v1), last revised 9 Feb 2020 (this version, v3))
Abstract: The method of software analysis of high-resolution TEM images using the peak pairs algorithm in combination with Raman spectroscopy was employed to study lattice deformations in Ge/Si(001) structures with low-temperature Ge quantum dots. It was found that the stresses do not spread in a thick Si layer above quantum dots, but completely relax via the formation of a thin boundary layer of mixed composition. However, intermixing of Ge and Si is absent beneath the Ge layer in samples with a Ge coverage of 10 \r{A}. Besides intermixing was not observed at all, both beneath and above the Ge layer, in samples with a Ge coverage of 6 \r{A} or less. This may be due to the predominance of Ge diffusion into the Si matrix from the {105} facets of Ge huts, not from the Ge wetting layer, at low temperatures of the Ge/Si structure deposition. The critical thickness of Si coverage at which the intense stress-induced diffusion takes place is determined to lie in the range from 5 to 8 nm.
Submission history
From: Vladimir Yuryev [view email][v1] Tue, 16 Jul 2019 17:52:32 GMT (7230kb)
[v2] Wed, 17 Jul 2019 14:19:52 GMT (7230kb)
[v3] Sun, 9 Feb 2020 10:37:54 GMT (7460kb,D)
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