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Condensed Matter > Materials Science

Title: Electronic structure evolution in dilute carbide Ge$_{1-x}$C$_{x}$ alloys and implications for device applications

Abstract: We present a theoretical analysis of electronic structure evolution in the highly-mismatched dilute carbide group-IV alloy Ge$_{1-x}$C$_{x}$. For ordered alloy supercells, we demonstrate that C incorporation strongly perturbs the conduction band (CB) structure by driving hybridisation of $A_{1}$-symmetric linear combinations of Ge states lying close in energy to the CB edge. This leads, in the ultra-dilute limit, to the alloy CB edge being formed primarily of an $A_{1}$-symmetric linear combination of the L-point CB edge states of the Ge host matrix semiconductor. Our calculations describe the emergence of a "quasi-direct" alloy band gap, which retains a significant admixture of indirect Ge L-point CB edge character. We then analyse the evolution of the electronic structure of realistic (large, disordered) Ge$_{1-x}$C$_{x}$ alloy supercells for C compositions up to $x = 2$%. We show that short-range alloy disorder introduces a distribution of localised states at energies below the Ge CB edge, with these states acquiring minimal direct ($\Gamma$) character. Our calculations demonstrate strong intrinsic inhomogeneous energy broadening of the CB edge Bloch character, driven by hybridisation between Ge host matrix and C-related localised states. The trends identified by our calculations are markedly different to those expected based on a recently proposed interpretation of the CB structure based on the band anti-crossing model. The implications of our findings for device applications are discussed.
Subjects: Materials Science (cond-mat.mtrl-sci)
DOI: 10.1063/1.5111976
Cite as: arXiv:1911.06186 [cond-mat.mtrl-sci]
  (or arXiv:1911.06186v1 [cond-mat.mtrl-sci] for this version)

Submission history

From: Christopher A. Broderick [view email]
[v1] Thu, 14 Nov 2019 15:42:29 GMT (284kb,D)

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