Current browse context:
physics.app-ph
Change to browse by:
References & Citations
Physics > Applied Physics
Title: The Fourier signatures of memristive hysteresis
(Submitted on 3 Oct 2020 (v1), last revised 26 Mar 2021 (this version, v3))
Abstract: While resistors with memory, sometimes called memristive elements (such as ReRAM cells), are often studied under conditions of periodic driving, little attention has been paid to the Fourier features of their memory response (hysteresis). Here we demonstrate experimentally that the hysteresis of memristive systems can be unambiguously distinguished from the linear or non-linear response of systems without hysteresis by the values of certain Fourier series coefficients. We also show that the Fourier series convergence depends on driving conditions, and introduce a measure of hysteresis. These results may be used to quantify the memory content of resistive memories, and tune their Fourier spectrum according to the excitation signal.
Submission history
From: Yuriy Pershin [view email][v1] Sat, 3 Oct 2020 09:43:47 GMT (89kb,D)
[v2] Fri, 4 Dec 2020 22:26:59 GMT (111kb,D)
[v3] Fri, 26 Mar 2021 03:43:43 GMT (112kb,D)
Link back to: arXiv, form interface, contact.