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Condensed Matter > Mesoscale and Nanoscale Physics
Title: Tunnel field-effect transistors for sensitive terahertz detection
(Submitted on 6 Oct 2020 (v1), last revised 4 Jan 2021 (this version, v2))
Abstract: The rectification of electromagnetic waves to direct currents is a crucial process for energy harvesting, beyond-5G wireless communications, ultra-fast science, and observational astronomy. As the radiation frequency is raised to the sub-terahertz (THz) domain, ac-to-dc conversion by conventional electronics becomes challenging and requires alternative rectification protocols. Here we address this challenge by tunnel field-effect transistors made of bilayer graphene (BLG). Taking advantage of BLG's electrically tunable band structure, we create a lateral tunnel junction and couple it to an antenna exposed to THz radiation. The incoming radiation is then down-converted by the tunnel junction nonlinearity, resulting in high-responsivity (> 4 kV/W) and low-noise (0.2 pW/$\sqrt{\mathrm{Hz}}$}) detection. We demonstrate how switching from intraband Ohmic to interband tunneling regime can raise detectors' responsivity by few orders of magnitude, in agreement with the developed theory. Our work demonstrates a potential application of tunnel transistors for THz detection and reveals BLG as a promising platform therefor.
Submission history
From: Georgy Alymov [view email][v1] Tue, 6 Oct 2020 21:23:06 GMT (1889kb,D)
[v2] Mon, 4 Jan 2021 15:30:19 GMT (4134kb,D)
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