Title: Twistronics {\it vs} straintronics in twisted bilayer graphene

Abstract: Several numerical studies have shown that the electronic properties of twisted bilayer graphene (TBLG) are tunable by strain engineering of the stacking layers. In particular, the flatness of the low energy moir\'e bands was found to be, substantially, sensitive to the strain. However, to the best of our knowledge, there is no full analytical calculations of the effect of strain on such bands. We derive, based on the continuum model of Bistritzer and MacDonald (P. N. A. S., {\bf 108}, 12233 (2011), the low energy Hamiltonian of the strained TBLG at small twist angles. We obtain the analytical expressions of the strain renormalized Dirac velocities and explain the role of strain in the emergence of the flat bands. We discuss how strain could correct the twist angles and bring them closer to the magic angle $\theta_m=1.05^{\circ}$. The analytical results are also compared to our numerical tight binding moir\'e band structure.