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Condensed Matter > Materials Science
Title: Ni Schottky barrier on heavily doped phosphorous implanted 4H-SiC
(Submitted on 17 Feb 2021 (v1), last revised 15 Apr 2021 (this version, v3))
Abstract: The electrical behavior of Ni Schottky barrier formed onto heavily doped (ND>1019 cm-3) n-type phosphorous implanted silicon carbide (4H-SiC) was investigated, with a focus on the current transport mechanisms in both forward and reverse bias. The forward current-voltage characterization of Schottky diodes showed that the predominant current transport is a thermionic-field emission mechanism. On the other hand, the reverse bias characteristics could not be described by a unique mechanism. In fact, under moderate reverse bias, implantation-induced damage is responsible for the temperature increase of the leakage current, while a pure field emission mechanism is approached with bias increasing. The potential application of metal/4H-SiC contacts on heavily doped layers in real devices are discussed.
Submission history
From: Fabrizio Roccaforte [view email][v1] Wed, 17 Feb 2021 18:37:10 GMT (1006kb)
[v2] Fri, 19 Mar 2021 14:46:04 GMT (419kb)
[v3] Thu, 15 Apr 2021 17:58:44 GMT (370kb)
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