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Condensed Matter > Mesoscale and Nanoscale Physics
Title: Clean quantum point contacts in an InAs quantum well grown on a lattice-mismatched InP substrate
(Submitted on 11 Feb 2022 (v1), last revised 14 May 2022 (this version, v2))
Abstract: Strong spin-orbit coupling, the resulting large $g$ factor, and small effective mass make InAs an attractive material platform for inducing topological superconductivity. The surface Fermi level pinning in the conduction band enables highly transparent ohmic contact without excessive doping. We investigate electrostatically defined quantum point contacts (QPCs) in a deep-well InAs two-dimensional electron gas. Despite the 3.3% lattice mismatch between the InAs quantum well and the InP substrate, we report clean QPCs with up to eight pronounced quantized conductance plateaus at zero magnetic field. Source-drain dc bias spectroscopy reveals a harmonic confinement potential with a nearly $5$ meV subband spacing. We find a many-body exchange interaction enhancement for the out-of-plane $g$ factor $|g_{\perp}^*| = 27 \pm 1$, whereas the in-plane $g$ factor is isotropic $|g^*_{x}| = |g^*_{y}| = 12 \pm 2$, close to the bulk value for InAs.
Submission history
From: Praveen Sriram [view email][v1] Fri, 11 Feb 2022 18:49:46 GMT (2189kb,D)
[v2] Sat, 14 May 2022 22:26:18 GMT (5489kb,D)
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