Title: Simultaneously-Measured Mid-Infrared Refractive Indices of GaAs/AlGaAs

Abstract: We present our results for a simultaneous measurement of the refractive indices of Gallium Arsenide (GaAs) and Aluminum Gallium Arsenide (Al$_\mathrm{x}$Ga$_\mathrm{1-x}$As) in the spectral region from $2.0$ to $7.1\,\mathrm{\mu}\mathrm{m}$ ($5000$ to $1400\,\mathrm{cm^{-1}}$). These values are obtained from a monocrystalline thin-film multilayer Bragg mirror of excellent purity (background doping $\leq 1 \times 10^{-14}\,\mathrm{cm^{-3}}$), grown via molecular beam epitaxy. To recover the refractive indices over such a broad wavelength range, we fit a dispersion model for each material. For that, we measure both a photometrically accurate transmittance spectrum of the Bragg mirror via Fourier-transform infrared spectrometry and the individual physical layer thicknesses of the structure via scanning electron microscopy. To infer the uncertainty of the refractive index values, we estimate relevant measurement uncertainties and propagate them via a Monte-Carlo-type method. This method conclusively yields propagated relative uncertainties on the order of $10^{-4}$ over the measured spectral range for both GaAs and Al$_{0.929}$Ga$_{0.071}$As. The fitted model can also approximate the refractive index for MBE-grown Al$_\mathrm{x}$Ga$_\mathrm{1-x}$As for $0 \leq x \leq 1$. These updated values will be essential in the design and fabrication of next-generation active and passive optical devices in a spectral region which is of high interest in many fields, e.g., laser design and cavity-enhanced spectroscopy.