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Condensed Matter > Materials Science
Title: Tuning electronic properties in transition metal dichalcogenides MX$_2$ (M= Mo/W, X= S/Se) heterobilayers with strain and twist angle
(Submitted on 16 May 2023 (v1), last revised 10 Dec 2023 (this version, v3))
Abstract: We explore the direct to indirect band gap transitions in MX$_2$ (M= Mo/W, X= S/Se) transition metal dichalcogenides heterobilayers for different system compositions, strains, and twist angles based on first principles density functional theory calculations within the G$_0$W$_0$ approximation. The obtained band gaps that typically range between 1.4$-$2.0 eV are direct/indirect for different/same chalcogen atom systems and can often be induced through expansive/compressive biaxial strains of a few percent. A direct to indirect gap transition is verified for heterobilayers upon application of a finite 16$^{\circ}$ twist that weakens interlayer coupling. The large inter-layer exciton binding energies of the order of $\sim$~250~meV estimated by solving the Bethe-Salpeter equation suggest these systems are amenable to be studied through infrared and Raman spectroscopy.
Submission history
From: Ravina Beniwal [view email][v1] Tue, 16 May 2023 06:59:10 GMT (12734kb,D)
[v2] Thu, 7 Dec 2023 15:09:22 GMT (12931kb,D)
[v3] Sun, 10 Dec 2023 09:37:45 GMT (12957kb,D)
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