References & Citations
Condensed Matter > Materials Science
Title: X-ray induced persistent photoconductivity in Si-doped Al$_{0.35}$Ga$_{0.65}$As
(Submitted on 11 Jul 2000 (v1), last revised 29 Jul 2000 (this version, v2))
Abstract: We demonstrate that X-ray irradiation can be used to induce an insulator-metal transition in Si-doped Al$_{0.35}$Ga$_{0.65}$As, a semiconductor with {\it DX} centers. The excitation mechanism of the {\it DX} centers into their shallow donor state was revealed by studying the photoconductance along with fluorescence. The photoconductance as a function of incident X-ray energy exhibits an edge both at the Ga and As K-edge, implying that core-hole excitation of Ga and As are efficient primary steps for the excitation of {\it DX} centers. A high quantum yield ($\gg 1$) suggests that the excitation is indirect and nonlocal, due to secondary electrons, holes, and fluorescence photons.
Submission history
From: Yeong-Ah Soh [view email][v1] Tue, 11 Jul 2000 18:59:18 GMT (108kb)
[v2] Sat, 29 Jul 2000 00:44:10 GMT (108kb)
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