References & Citations
Condensed Matter > Mesoscale and Nanoscale Physics
Title: Gating of a molecular transistor: Electrostatic and Conformational
(Submitted on 8 Dec 2002 (v1), last revised 11 Mar 2004 (this version, v2))
Abstract: We derive a general result that can be used to evaluate and compare the transconductance of different field-effect mechanisms in molecular transistors, both electrostatic and conformational. The electrostatic component leads to the well-known thermal limit in the absence of tunneling. We show that in a standard three-terminal geometry and in the absence of strong electron-phonon coupling, the conformational component can lead to significant advantages only if the molecular dipole moment \mu is comparable to et_ox, t_ox being the thickness of the oxide. Surprisingly this conclusion is independent of the ``softness'' of the conformational modes involved, or other geometrical factors. Detailed numerical results for specific examples are presented in support of the analytical results.
Submission history
From: avik w. ghosh [view email][v1] Sun, 8 Dec 2002 09:43:28 GMT (617kb)
[v2] Thu, 11 Mar 2004 14:59:56 GMT (641kb)
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