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Condensed Matter > Materials Science

Title: Binding energies of hydrogen-like impurities in a semiconductor in intense terahertz laser fields

Abstract: A detailed theoretical study is presented for the influence of linearly polarised intense terahertz (THz) laser radiation on energy states of hydrogen-like impurities in semiconductors. The dependence of the binding energy for 1s and 2p states on intensity and frequency of the THz radiation has been examined.
Comments: 14 pages, 4 figures
Subjects: Materials Science (cond-mat.mtrl-sci)
DOI: 10.1142/S021797920301834X
Cite as: arXiv:cond-mat/0304258 [cond-mat.mtrl-sci]
  (or arXiv:cond-mat/0304258v1 [cond-mat.mtrl-sci] for this version)

Submission history

From: Wen Xu [view email]
[v1] Fri, 11 Apr 2003 02:55:40 GMT (66kb)

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