References & Citations
Condensed Matter > Materials Science
Title: Anomalous bias dependence of tunnel magnetoresistance in a magnetic tunnel junction
(Submitted on 12 Jul 2004 (v1), last revised 7 Apr 2005 (this version, v2))
Abstract: We have fabricated a spin-polarized tunneling device based on half metallic manganites incorporating $Ba_{2}LaNbO_{6}$ as insulating barrier. An anomalous bias dependence of tunnel magnetoresistance (TMR) has been observed, the first of its kind in a symmetric electrode tunnel junction with single insulating barrier. The bias dependence of TMR shows an extremely sharp zero bias anomaly, which can be considered as a demonstration of the drastic density of states variation around the Fermi level of the half metal. This serves as a strong evidence for the existence of minority spin tunneling states at the half-metal insulator interface.
Submission history
From: Soumik Mukhopadhyay [view email][v1] Mon, 12 Jul 2004 14:48:10 GMT (120kb)
[v2] Thu, 7 Apr 2005 14:11:04 GMT (87kb)
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